unisonic technologies co., ltd bc546/547/548 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r201-037.d switching and amplifier applications ? features * high voltage: utc bc546 , v ceo =65v utc bc547 , v ceo =45v utc bc548 , v ceo =30v to-92 1 ? ordering information order number package pin assignment packing lead free halogen free 1 2 3 bc546l-x-t92-b BC546G-X-T92-B to-92 c b e tape box bc546l-x-t92-k bc546g-x-t92-k to-92 c b e bulk bc547l-x-t92-b bc547g-x-t92-b to-92 c b e tape box bc547l-x-t92-k bc547g-x-t92-k to-92 c b e bulk bc548l-x-t92-b bc548g-x-t92-b to-92 c b e tape box bc548l-x-t92-k bc548g-x-t92-k to-92 c b e bulk note: pin assignment: c: collector b: base e: emitter bc546l-x-t92-b (1)packing type (2)package type (3)rank (4)halogen free (1) b: tape box, k: bulk (2) t92: to-92 (3) x: refer to classification of h fe (4) l: lead free, g: halogen free ? marking bc546 bc547 bc548
bc546/547/548 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-037.d ? absolute maximum rating (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage bc546 v cbo 80 v bc547 50 v bc548 30 v collector-emitter voltage bc546 v ceo 65 v bc547 45 v bc548 30 v emitter-base voltage bc546 v ebo 6 v bc547 6 v bc548 5 v collector current (dc) i c 100 ma collector dissipation p c 500 mw junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =30v, i e =0 15 na dc current gain h fe v ce =5v, i c =2ma 110 800 collector-emitter sa turation voltage v ce(sat) i c =10ma, i b =0.5ma 90 250 mv i c =100ma, i b =5ma 200 600 mv base-emitter satura tion voltage v be(sat) i c =10ma, i b =0.5ma 700 mv i c =100ma, i b =5ma 900 mv base-emitter on voltage v be(on) v ce =5v, i c =2ma 580 660 700 mv v ce =5v, i c =10ma 720 mv current gain bandwidth product f t v ce =5v, i c =10ma, f=100mhz 300 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 3.5 6 pf input capacitance c ib v eb =0.5v, i c =0, f=1mhz 9 pf noise figure nf v ce =5v, i c =200 a, f=1khz, r g =2k ? 2 10 db ? classification of h fe rank a b c h fe 110 - 220 200 ? 450 420 - 800
bc546/547/548 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-037.d ? typical characteristics collector current , i c (ma) collect current, i c (ma) dc current gain, h fe saturation voltage, v be(sat) , v ce(sat) , (v) capacitance, c ob (pf) current gain-bandwidth prouct, f t
bc546/547/548 npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-037.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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